Packaged Microelectronic Device for a Package-on-Package Device

ABSTRACT

Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (“PoP”) with enhanced tolerance for warping. In one such packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This nonprovisional application hereby claims benefit of priority topending U.S. Provisional Patent Application Ser. No. 62/257,223, filedon 18 Nov. 2015, and to U.S. Provisional Patent Application Ser. No.62/256,699, filed on 17 Nov. 2015, the entire contents and disclosure ofeach of which is hereby expressly incorporated by reference herein as iffully set forth herein for all purposes to the extent same is consistentherewith. The present application is related to the commonly-owned,co-pending United States nonprovisional patent application entitled “AN“RDL-FIRST” PACKAGED MICROELECTRONIC DEVICE FOR A PACKAGE-ON-PACKAGEDEVICE”, U.S. patent application Ser. No. ______ (Attorney Docket No.IN001-0191-US-05), filed on even date herewith, the entire contents anddisclosure of which is expressly incorporated by reference herein as iffully set forth herein for all purposes to the extent same is consistentherewith.

FIELD

The following description relates to microelectronic devices. Moreparticularly, the following description relates to a packagedmicroelectronic device for a package-on-package device to provideenhanced tolerance for warping.

BACKGROUND

Package-on-package microelectronic devices conventionally include two ormore packaged microelectronic devices stacked on one another. Morerecently, one or more of these packaged microelectronic devices is sothin as to make warpage a more significant yield and/or reliabilitylimiting factor.

BRIEF DESCRIPTION OF THE DRAWING(S)

Accompanying drawing(s) show exemplary embodiment(s) in accordance withone or more aspects of exemplary apparatus(es) or method(s). However,the accompanying drawings should not be taken to limit the scope of theclaims, but are for explanation and understanding only.

FIGS. 1-1 through 1-10 are a progression of block diagramsillustratively depicting exemplary process flows and structures for a“redistribution layer first” formation of a packaged microelectronicdevice.

FIGS. 2-1 through 2-3 are block diagrams illustratively depicting apackage-on-package device including the packaged microelectronic deviceof FIG. 1-10 at different states of warpage.

FIGS. 3-1 through 3-3 are a progression of block diagrams illustrativelydepicting exemplary process flows and structures for a “redistributionlayer first” formation for another packaged microelectronic device for apackage-on-package device.

FIGS. 4-1 through 4-3 are a progression of block diagrams illustrativelydepicting exemplary process flows and structures for a “redistributionlayer first” formation for yet another packaged microelectronic devicefor a package-on-package device.

FIG. 5 is a flow diagram illustratively depicting an exemplary“redistribution layer first” process flow for a packaged microelectronicdevice in accordance with any and all of FIGS. 1-1 through 4-3.

FIGS. 6-1 through 6-4B are progressions of block diagrams illustrativelydepicting exemplary process flows and structures for a “redistributionlayer last” formation for still yet another packaged microelectronicdevice for a package-on-package device.

FIGS. 7-1 and 7-2 are a progression of block diagrams illustrativelydepicting exemplary process flows and structures for a “redistributionlayer-less” formation for further yet another packaged microelectronicdevice for a package-on-package device.

FIG. 8 is a flow diagram illustratively depicting an exemplary“redistribution layer last” and “redistribution layer-less” process flowfor a packaged microelectronic device in accordance with any and all ofFIGS. 6-1 through 7-2.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth toprovide a more thorough description of the specific examples describedherein. It should be apparent, however, to one skilled in the art, thatone or more other examples or variations of these examples may bepracticed without all the specific details given below. In otherinstances, well known features have not been described in detail so asnot to obscure the description of the examples herein. For ease ofillustration, the same number labels are used in different diagrams torefer to the same items; however, in alternative examples the items maybe different.

Exemplary apparatus(es) and/or method(s) are described herein. It shouldbe understood that the word “exemplary” is used herein to mean “servingas an example, instance, or illustration.” Any example or featuredescribed herein as “exemplary” is not necessarily to be construed aspreferred or advantageous over other examples or features.

The following description includes description of package-on-packagemicroelectronic devices (“PoPs”). Along those lines, one microelectronicpackage of a PoP may be configured to accommodate warpage of anothermicroelectronic package. Optionally, microelectronic packages of a PoPmay be configured to accommodate warpage between directly coupledmicroelectronic packages of a PoP.

Some microelectronic packages are presently in a range of approximately150 to 400 microns thick (0.150 to 0.400 millimeters (mm) thick), for amicroelectronic package in total height, excluding solder ball or otherexternal interconnects. Overall height of a PoP is presentlyconventionally approximately 800 to 1200 microns (0.800 to 1.200 mm). Asone or more microelectronic packages in a PoP may be in a range ofapproximately 150 to 400 microns thick, likelihood of warping of suchone or microelectronic packages may be higher than if such one or moremicroelectronic packages were thicker than 400 microns.

As described below in additional detail, one or more interconnectstructures are provided with protruding ends (“protrusions”) above amolding or encapsulation surface of one or more of such microelectronicpackages of a PoP. Heights of these protrusions allow for more surfacearea in a vertical or z-axis direction. However, height of theseprotrusions is limited by an overall height allowance of such PoPs.

Microelectronic packages of a PoP directly coupled to one another warpaway one from the other. Furthermore, directly coupled microelectronicpackages of a PoP may both warp in opposing directions away from oneanother. However, surface area of such protrusions may allow soldermasses or other electrically conductive eutectic bonding masses(“bonding masses”) to more readily stay adhered in the presence of suchwarpage. Increased surface area provided by such protrusions to whichsuch bonding masses are attached at least in part may allow for anincrease in allowable warpage. Whether either or both microelectronicpackages directly coupled to one another warp, height of protrusionstherebetween in excess of convention allows for an increased tolerancefor such warpage.

Along those lines, a method relates generally to forming a packagedmicroelectronic device. In such a method, at least one redistributionlayer is formed having an inner region and an outer region outside theinner region. The forming of the at least one redistribution layerincludes forming first interconnect pads in both the inner region andthe outer region on a lower surface and second interconnect pads in theouter region on an upper surface of the at least one redistributionlayer. Interconnect structures are formed on and extend away fromcorresponding upper surfaces of the second interconnect pads in theouter region. A microelectronic device is coupled to an upper surface ofthe at least one redistribution layer in the inner region. A dielectriclayer is formed to surround at least portions of shafts of theinterconnect structures. The interconnect structures have upper endsthereof protruding above an upper surface of the dielectric layer adistance to increase a warpage limit for a combination of at least thepackaged microelectronic device and one other packaged microelectronicdevice directly coupled to protrusions of the interconnect structures.

An apparatus relates generally to a packaged microelectronic device. Insuch a packaged microelectronic device, at least one redistributionlayer has an inner region and an outer region outside the inner region.The at least one redistribution layer includes first interconnect padsin both the inner region and the outer region on a lower surface andsecond interconnect pads in the outer region on an upper surface of theat least one redistribution layer. Interconnect structures are on andextend away from corresponding upper surfaces of the second interconnectpads in the outer region. A microelectronic device is coupled to anupper surface of the at least one redistribution layer in the innerregion. A dielectric layer surrounds at least portions of shafts of theinterconnect structures. The interconnect structures have upper endsthereof protruding above an upper surface of the dielectric layer adistance to increase a warpage limit for a combination of at least thepackaged microelectronic device and one other packaged microelectronicdevice directly coupled to protrusions of the interconnect structures.

Another method relates generally to forming a packaged microelectronicdevice. In such other method, interconnect structures are formed in anouter region of the packaged microelectronic device. A microelectronicdevice is coupled in an inner region of the packaged microelectronicdevice inside the outer region. A dielectric layer is formed to surroundat least portions of shafts of the interconnect structures and alongsides of the microelectronic device. The interconnect structures havefirst ends thereof protruding above an upper surface of the dielectriclayer a distance to increase a warpage limit for a combination of atleast the packaged microelectronic device and one other packagedmicroelectronic device directly coupled to protrusions of theinterconnect structures.

Another apparatus relates generally to another packaged microelectronicdevice. In such other packaged microelectronic device, interconnectstructures are in an outer region of the packaged microelectronicdevice. A microelectronic device is coupled in an inner region of thepackaged microelectronic device inside the outer region. A dielectriclayer surrounds at least portions of shafts of the interconnectstructures and along sides of the microelectronic device. Theinterconnect structures have first ends thereof protruding above anupper surface of the dielectric layer a distance to increase a warpagelimit for a combination of at least the packaged microelectronic deviceand one other packaged microelectronic device directly coupled toprotrusions of the interconnect structures.

Other features will be recognized from consideration of the remainder ofthe Detailed Description and Claims, which follow.

RDL First Examples with “Straight” Interconnect Structures

FIGS. 1-1 through 1-10 are a progression of block diagramsillustratively depicting exemplary process flows and structures for apackaged microelectronic device (“packaged device”) 100. Withsimultaneous reference to FIGS. 1-1 through 1-10, formation of apackaged device 100 is further described.

At 201, a carrier substrate 101 may be obtained having an upper surface121 and a lower surface 104 opposite upper surface 121. Carriersubstrate 101 may be any support platform, including without limitationa carrier wafer, used to provide temporary support for formation of aplurality of substrate assemblies thereon, including a plurality ofpackaged devices 100 even though formation of a single packaged device100 is illustratively depicted for purposes of clarity and notlimitation.

An adhesive layer 102, such as an adhesive tape or other adhesive layer,may optionally be formed, put upon or otherwise adhered to an uppersurface 121 of carrier substrate 101 in direct contact therewith.

A metal layer 103, such as a metal foil including without limitation acopper foil, may be formed, put on or otherwise applied to an uppersurface 122 of adhesive layer 102 in direct contact therewith. Ifoptional adhesive layer 102 is not used, then metal layer 103 may beplaced on upper surface 121 of carrier substrate 101 in direct contacttherewith.

At 202, metal layer 103 may be patterned to form conductive pads 103.Formation of conductive pads 103 may be by masking, lithographicpatterning and metal etching, direct write e-beam or laser patterning,or other suitable means for removing a part of metal layer 103 to formelectrically conductive interconnect pads (“conductive pads”) 103.

Conductive pads 103 may generally be located in either of two regions,an inner region 104 or an outer region 129. Outer region 129 maygenerally be thought of as a peripheral layout region, and inner region104 may generally be thought of as an area array layout region.

Formation of conductive pads 103 may be considered an initial metallayer for formation of a redistribution layer (“RDL”) 107. Conductivepads 103 may in whole or in part form an area array layout. Optionally,a dielectric layer may be used, and such dielectric layer may bepatterned at 202 to form recesses for conductive pads 103 followed bydeposition of a metal layer 103 including into such recesses followed byetching, polishing or grinding back for providing conductive pads 103.

At 203, one or more dielectric layers, such as one or more spin coatlayers, may be used to form at least one dielectric layer 118 for aredistribution layer 107. As is known, a redistribution layer 107 mayinclude one or more dielectric layers and one or more metal layers.

Dielectric layer 118 may be patterned to form recesses associated withconductive pads, illustratively depicted as recesses 156. A metal layer119 may be conformally deposited onto an upper surface of such patterneddielectric layer 118.

At 204, such metal layer 119 may be polished or ground down todielectric layer 118 to in effect provide electrically conductive vias(“vias”) 119V to conductive pads 103. Optionally, pad level electricallyconductive traces (“traces”) 119T may be provided with metal layer 119.Optionally, recesses for surface traces may be formed in an uppersurface of dielectric layer 118 for conformal deposition of metal layer119 therein to form traces 119T, which may or may not be interconnectedto vias 119V for electrical conductivity.

At 205, a capping dielectric layer 105 may be deposited to fill recessesformed, such as for forming vias 119V for example, for redistributionlayer 107. Such capping dielectric layer 105 may be polished or groundback to provide an upper surface 123.

At 206, interconnect pads 108 of a redistribution layer 107 may beformed, such as in any of the above-described ways of forming conductivepads 103, on upper surface 123. Interconnect pads 108 in this exampleare formed only in outer region 129. In contrast, conductive pads 103 inthis example are formed in both inner region 104 and outer region 129.

Optionally, a lower redistribution layer 107-1 may be formed followed byoptional formation of an upper redistribution layer 107-2 interconnectedto redistribution layer 107-1. However, for purposes of clarity by wayof example and not limitation, it shall be assumed that a singleredistribution layer 107 is used in this example.

Before or after formation of interconnect pads 108, at 207A contacts111, which may include electrically conductive solder or other eutecticmasses, may be formed or put in an inner region 104 on an upper surface123 of dielectric layer 105. Contacts 111 may be for interconnection ofan integrated circuit microelectronic device (“microelectronic device”)109.

Microelectronic device 109 may be positioned in inner region 104 in a“face-down” orientation for interconnection through contacts 111 withvias 119V and/or traces 119T. In an example, microelectronic device 109may be an active device, such as for example an active area arraymicroelectronic device. In another example, microelectronic device 109may be a passive device, such as for example a passive area arraymicroelectronic device. In yet another example, microelectronic device109 may include an interposer having one or more integrated circuit diescoupled thereto. In still yet another example, microelectronic device109 may include one or more stacks of integrated circuit dies.

Microelectronic device 109 may be a bare or packaged device. In anexample, microelectronic device 109 may optionally include a backsideredistribution layer 199. Backside redistribution layer 199 may or maynot be interconnected internally within microelectronic device 109 toone or more active devices, such as an integrated circuit die componentof microelectronic device 109. Such integrated backside redistributionlayer 199 may for example be a passive device for routing of signalsand/or voltages.

Optionally at 207B, before or after formation of interconnect pads 108,at 207B an adhesive layer 128, such as for a die attach pad for example,may be formed or positioned in an inner region 104 on an upper surface123 of dielectric layer 105 for interconnection of microelectronicdevice 109. Microelectronic device 109 may be positioned in a “face-up”or a “face-down” orientation for attachment to an upper surface 123 ofdielectric layer 105 through use of adhesive layer 128. For purposes ofclarity by way of example and not limitation, a face-down orientation ofmicroelectronic device 109 is further described.

At 208, interconnect structures 115 may be formed on and extending awayfrom corresponding upper surfaces 124 of interconnect pads 108 in outerregion 129. Generally, in this example interconnect structures 115 are“straight”, namely there is no intentional bend in interconnectstructures 115 in this example. In an example, interconnect structures115 can be formed as wire bond wires or other extruded electricalconductor bonded to upper surfaces 124.

In another example, interconnect structures 115 may be formed as platedwires. Plated wires may be formed including depositing a resist, maskingand patterning such resist, removing portions of such resist to formholes with corresponding upper surfaces 124 as bottom surfacesrespectively thereof. Such holes may be plated with one or more layersof material, including at least one electrically conductive material.Generally, solid or hollow metal posts may be formed in part by plating.In another example, metal coated dielectric posts may be formed.

Interconnect structures 115 implemented as wire bond wires may have athickness 114 in a range of approximately 15 to 45 microns. Interconnectstructures implemented as plated posts may have a thickness 114 in arange of approximately 1 to 45 microns.

In another example, additional surface area for plated posts may beformed by optionally forming contact pads 198. Contact pads 198 may beformed same or similar to plated posts, as bases of protrusions 220.However, for purposes of clarity by way of example and not limitation,it shall be assumed that optional contact pads 198 are not formed inthis example.

Generally, interconnect structures 115 may be formed by dipping,transferring, depositing, placing, or a combination thereof, to formpins, posts, pillars, leads, wires, or other similar structures having avertical orientation which may or may not be perpendicular to uppersurfaces of corresponding interconnect pads 108.

Interconnect structures 115 may be solid or hollow, fully or partiallyelectrically conductive, and/or supported partially by a semiconductoror dielectric material. For purposes of clarity by way of example andnot limitation, an example with plating-formed posts for interconnectstructures 115 is further described.

At 209, optionally with formation of interconnect structures 115 at 208,interconnect structures 116 may simultaneously be formed thoughextending away from an upper surface 129 of a microelectronic device109. In an example, interconnect structures 116 may be interconnected tothrough-silicon-vias (not shown) of microelectronic device 109.Optionally, interconnect structures 116 may be formed in separateoperations than interconnect structures 115.

For an optional backside redistribution layer 199 included withmicroelectronic device 109, a fan-in or fan-out pitch may be used byinterconnect structures 116 for interconnection with such backsideredistribution layer 199. Optionally, microelectronic device 109 mayinclude a front side redistribution layer or interposer 197 for a fan-inor fan-out pitch for coupling to contacts 111. Optionally, both optionalredistribution layers 197 and 199 may be included in microelectronicdevice 109.

Assuming no TSVs in microelectronic device 109, optional backsideredistribution layer 199 may not be internally interconnected withinmicroelectronic device 109 to an IC die thereof for signaling. However,a front side redistribution layer 197 may be internally interconnectedwithin microelectronic device 199 to an IC die thereof for signaling.

Optionally, interconnect structures 115 may be straight but slanted ortilted, as generally indicated with dashed line 196, to increase pitch.For purposes of clarity by way of example and not limitation, it shallbe assumed that optional redistribution layers 197 and 199 are notincluded in microelectronic device 109 and that interconnect structures115 are not slanted.

For purposes of clarity by way of example and not limitation, an exampleof plating-formed posts for interconnect structures 116 is furtherdescribed. Generally, solid or hollow metal posts may be formed in partby plating. In another example, metal coated dielectric posts may beformed. In yet another example, interconnect structures 116 may be wirebond wires or one or more of the other examples for interconnectstructures 115. Optionally, a combination of two or more different formsof interconnect structures 115 and/or 116 may be implemented.

Interconnect structures 115 may be used to increase a warpage limit withrespect to outer region 129. Inner interconnect structures 116 may beused to increase a warpage limit with respect to inner region 104.

At 210, a dielectric layer 117 may be formed surrounding at leastportions of shafts 115S of interconnect structures 115 and along sides167 of and over and on an upper surface 168 of microelectronic device109. Optionally, dielectric layer 117 may be formed surrounding at leastportions of shafts 116S of interconnect structures 116.

Interconnect structures 115 and/or 116 may respectively havecorresponding upper ends 115E and/or 116E, as well as correspondingportions of shafts 115S and/or 116S, protruding above an upper surface126 of dielectric layer 117. Interconnect structures 115 and/or 116 mayprotrude a distance of protrusion height 137 to provide protrusions 220for at least some if not all of interconnect structures 115 and/or 116.Protrusions 220 may have portions of shafts 115S and 116S for providingwicking lengths for adherence of solder or other electrically conductivebonding masses 131 at 211.

Protrusions 220 may increase a warpage limit for a combination of apackaged device 100 with another packaged device directly coupled toupper ends 115E and 116E respectively of corresponding interconnectstructures 115 and/or 116 with bonding masses 131. While some numericalexamples of heights for protrusions 220 are provided herein, generallyprotrusion height 137 is at least 30% of a distance 112 of separationbetween an upper surface 126 of packaged device 100 and a lower surface120 of a package device 130.

Dielectric layer 117 may be injection molded with a mold assist film toleave protrusions 220 out of molding material to form an upper surface126 of dielectric layer 117 below upper ends 115E and/or 116E by adistance or protrusion height 137. Optionally, dielectric layer 117 maybe formed by an encapsulant, molding or composite material, which may bemolded, potted, spun on, laminated, screen printed, applied, orotherwise suitably formed. If upper ends 115E and/or 116E are covered bya material used to form dielectric layer 117, subsequent polishing,grinding, and/or etching back may be used to reveal protrusions 220.

Protrusions 220 may have portions of shafts 115S at least temporarilyexposed for wettable surfaces by an electrically conductive bondingmaterial.

With additional reference to FIGS. 2-1 through 2-3, formation of a PoP139 is described.

At 211, packaged device 100 may be singulated from carrier substrate101. Carrier substrate 101 and adhesive layer 102 may be removed frompackaged device 100.

Further, at 211 another package device 130 may be directly coupled toupper ends 115E and/or 116E and/or at least portions of shafts 115Sand/or 116S of protrusions 220 with solder balls or other electricallyconductive bonding masses 131 to provide a PoP 139. Bonding masses 131may be deposited or otherwise formed over upper ends 115E and/or 116E aswell as along at least portions of shafts 115S and/or 116S ofprotrusions 220.

Protrusion height 137 for wicking of bonding masses 131 may be in arange above a conventional height of micro pillars on pads for a PoP,which conventional height is generally in a range of approximately 30 to40 microns. Protrusion height 137 may be in a range of approximately 75to 120 microns or more. In other words, protrusion height 137 may bemore than double the height of conventional micro pillars.

Generally height of bonding masses 131 is at least approximately 200 to250 microns after collapse for approximately a 300 to 400 micron pitchof such bonding masses. Thus no additional height need be added byprotrusions 220, as the entire length of protrusions 220 may be coveredby bonding masses 131. In other words, protrusion height 137 is lessthan overall height of bonding masses 131, and so protrusions 220 may beused without adding to height or thickness of PoP 139.

Solder balls or other electrically conductive bonding masses 155 may beattached to corresponding undersides of conductive pads 103, which areexposed after removal of carrier substrate 101, as well as possiblyoptional adhesive layer 102. In another example, electrically conductivebonding masses 155 may be for a surface mount interconnection.

In this example, packaged device 130 is of a different configurationthan packaged device 100. However, in another example packaged device130 may have a same general configuration as packaged device 100.

In this example configuration of packaged device 130, packaged device130 includes an interposer 133 having conductive routings 134interconnected to an integrated circuit die 132 with under bumpmetalization 135. A molding/encapsulating layer 136 of packaged device130 may be used to cover integrated circuit die 132.

Packaged device 130 may have a packaged device height or thickness 158from an upper surface of molding/encapsulating layer 136 to upper ends115E and 116E, namely including a portion, if any, of the thickness ofbonding masses 131 trapped between upper ends 115E or 116E and a lowersurface of interposer 133. packaged device height or thickness 158 forin such example may be in a range of approximately 800 to 1200 microns.Generally, packaged device 130 at least as thick as 800 microns is notas susceptible to warping as packaged device 100.

Packaged device 100 may have an overall height or thickness 157 fromupper ends 115E and 116E to bottom surface 122 of redistribution layer107, namely excluding bonding masses 155. A packaged device 100 may havea “body” thickness in a range of approximately 150 to 400 microns,excluding heights of conductive bonding masses 155 and protrusions 220.Assuming bonding masses 155 have a height in a range of approximately300 to 400 microns, total height or thickness 159 of PoP 139 may thus bein a range of approximately 1350 (i.e., 800+150+100+300) microns to 2120(i.e., 1200+400+120+400) microns.

For purposes of clarity by way of example and not limitation, assumingno warpage in packaged devices 100 and 130 in FIG. 2-1, PoP 139 of FIG.2-1 may be in a state of no warpage and thus may be a reference fordetermining a warpage measurement 138. Warpage measurement 138(illustratively depicted in FIGS. 2-2 and 2-3) may be for a greatestamount of warpage.

With reference to FIG. 2-2 for purposes of clarity by way ofnon-limiting example, packaged device 100 may be turned up at either orboth ends with reference to packaged device 130, assuming packageddevice 130 has no warpage for purposes of a reference. With reference toFIG. 2-3 for purposes of clarity by way of non-limiting example,packaged device 100 may be bowed upward in a middle section thereof withreference to packaged device 130, assuming packaged device 130 has nowarpage for purposes of a reference.

In either of these examples, a warpage measurement 138 may be obtained.This warpage measurement 138 may be a bounded parameter to a maximumwarpage of approximately 60 (i.e., 100-40) to 90 (i.e., 120-30) micronsin excess of a conventional limit therefor due to use of protrusions220. In other words, bonded masses 131 may be within tolerance forreliably maintaining a direct coupling of packaged device 100 and 130one to another even with a warpage in excess of a conventional limittherefor.

For purposes of clarity by way of non-limiting example, if height ofprotrusions is 100 microns and warpage tolerance without such additionalprotrusion heights is 100 microns with 40 micron high micro pillars,then overall warpage tolerance may be increased to approximately 160microns by use of protrusions as described herein. This is just oneexample, and other values may be used in accordance with the descriptionherein.

By increasing tolerance for warpage between two packaged devices with noincrease in overall height, yield and/or product reliability of PoPs maybe increased. Additionally, if protrusions 220 do not include optionalcontact pads 198, then surface area for wicked adherence of bondingmasses 131 may be limited to upper ends 115E and at least portions ofshafts 115S of protrusions 220 for interconnect structures 115 forexample. Thus, contact area reliability and warpage tolerance height areboth dependent on protrusions 220. In contrast to conventional micropillars, which use a pad to provide sufficient contact surface area forreliable adherence, protrusions 220 do not necessarily require use of apad for contact area.

If, however, optional contact pads 198 are implemented, then surfaceareas for contact with bonding masses 131 may be substantially providedby such contact pads 198 in comparison with surface areas of protrusions220. In this example, warpage tolerance height may be based primarily onprotrusions 220. In other words, if optional contact pads 198 are used,then shorter protrusions 220 may be used. However, less warpagetolerance may be provided by use of shorter protrusions 220 incomparison to taller protrusions 220.

RDL First Examples with “Bent” Interconnect Structures

FIGS. 3-1 through 3-3 are a progression of block diagrams illustrativelydepicting exemplary process flows and structures for other examples ofpackaged device 100. FIG. 3-1 continues after FIG. 1-7B, and so theprevious description is not repeated for purposes of clarity and notlimitation.

Again, a face-down orientation for microelectronic device 109 is assumedfor purposes of clarity and not limitation. Optional interconnectstructures 116 whether intentionally straight and/or intentionally bentto have lateral sections may be implemented in accordance with thedescription herein. For these examples, it is assumed that optionalinterconnect structures 116 are not implemented.

With simultaneous reference to FIGS. 1-1 through 3-3, such exemplaryprocess flows and structures for other examples of packaged device 100are further described.

At 221, one or more bent interconnect structures 115 are formed withlateral sections 115L. Interconnect structures 115 in previouslydescribed examples were intentionally straight. For FIGS. 3-1 through3-3, one or more of interconnect structures 115 may be intentionallyformed with one or more bends 160 at one or more ends of lateralsections 115L of such interconnect structures 115.

Bases 115B of bent interconnect structures 115 may be ball, stitch orotherwise bonded to upper surfaces 124 of corresponding interconnectpads 108. A wire bond forming tool (not shown) may be used to extendbases 115B vertically away from upper surfaces 124 and then bend wirebond wires, right or left, to initiate a bend 160 at an end of a lateralsection 115L within a shaft 115S of such a bent interconnect structure115. Lateral sections 115L may be bent at an acute angle 161 withreference to a horizontal plane of an upper or lower surface of aredistribution layer 107.

Optionally, a portion of a lateral section 115L may overlap an uppersurface 125 of microelectronic device 109, as illustratively indicatedwith a dashed line. Optionally, a portion of a lateral section 115L of abent interconnect structure 115 may overlap a portion of an adjacentneighboring interconnect pad 108, as illustratively indicated with adashed line. Optionally, a portion of a lateral section 115L of a bentinterconnect structure 115 may overlap a portion of an adjacentneighboring bent interconnect structure 115, as illustratively indicatedwith a dashed line.

Pitch P1 between bases 115B of adjacent neighboring interconnectstructures 115, including at least one bent interconnect structure 115thereof, may be substantially narrower than pitch P2 between upper ends115E of such adjacent neighboring interconnect structures 115. Alongthose lines, there may be more area for wider pitches by extending oneor more upper ends 115E of interconnect structures from outer region 129into inner region 104. Wider pitch P2 may be used to fan-out or fan-insignals and/or voltages from and/or to microelectronic device 109.

At 222, a dielectric layer 117 may be formed surrounding at leastportions of shafts 115S of interconnect structures 115, as previouslydescribed. Interconnect structures 115 may have corresponding upper ends115E, as well as corresponding portions of shafts 115S and/or 116S,protrude above an upper surface 126 of dielectric layer 117 a distanceor height 137. Interconnect structures 115 may protrude a distance ofprotrusion height 137 to provide protrusions 220 for at least some ifnot all of straight and/or bent interconnect structures 115.

Protrusions 220 may increase a warpage limit for a combination of apackaged device 100 with one other packaged device directly coupled toupper ends 115E of corresponding bent and/or straight interconnectstructures 115 with bonding masses 131. Protrusions 220 may be straight,whether perpendicular or not with respect to upper surface 126.

Upper ends 115E of protrusions 220 of bent interconnect structures 115may be are laterally displaced a distance 224 with respect tocorresponding bases 115B of such bent interconnect structures. Bent,slanted, and/or straight interconnect structures 115 may all have a sameprotrusion height 137.

Prior to attachment of upper ends 115E at least some, if not all, ofbent interconnect structures 115 have cantilevered portions of shafts115S. Cantilevered portions of shafts 115S may correspond to upper ends115E and may be strait for interconnection with a packaged device 130.

At least some of bent interconnect structures 115 are wire bond wiresbonded to upper surfaces 124 of interconnect pads 108 with cantileveredshafts being bonding tool formed. Optionally, a portion of such at leastsome of bent interconnect structures 115 may have cantilevered portionsof shafts 115S extending over upper surface 125 of a microelectronicdevice 109. Again, microelectronic device 109 may be an area arraymicroelectronic device.

Optionally, at least some of interconnect structures 115 may havedifferent pitches as between ends 115E and bases 115B thereof.Optionally, at least some of interconnect structures 115 may be shapedleads.

At 223, packaged device 100 may be singulated from carrier substrate101. Carrier substrate 101 and adhesive layer 102 may be removed frompackaged device 100 as previously described for operations at 211.

At 223, another package device 130 may be directly coupled to upper ends115E, and/or 116E, and at least portions of shafts 115S, and/or 116S, ofprotrusions 220 as previously described with reference to operations at211. Bonding masses 131 may be deposited or otherwise formed aspreviously described.

Protrusion height 137 may be as previously described. Bonding masses 131may be as previously described, so as to not add any additional heightor thickness to PoP 139.

Solder balls or other electrically conductive bonding masses 155 may beattached as previously described. Packaged device 130 may be aspreviously described. Packaged device 100 may be as previously describedwith respect to an overall height or thickness 157 from upper ends 115Eand 116E to bottom surface 122 of redistribution layer 107, namelyexcluding bonding masses 155.

FIGS. 4-1 through 4-3 are a progression of block diagrams illustrativelydepicting exemplary process flows and structures for still otherexamples of packaged device 100. FIG. 4-1 continues after FIG. 1-8 oroptionally FIG. 1-9, and so the previous description is not repeated forpurposes of clarity and not limitation.

At 231, a stiffening or other reinforcing layer (“reinforcing layer”)127 may be dispensed, deposited, spun on, or otherwise used to coat anin-process packaged device 100. Reinforcing layer 127 may be a stiffenermaterial. Reinforcing layer 127 may be deposited as a wicking layer toexposed surfaces of an in-process packaged device 100. Reinforcing layer127 may be used prior to formation of dielectric layer 117 to be beneathdielectric layer 117. Stiffener material may adhere to exteriorsurfaces, including in at least in part exterior surfaces ofinterconnect structures 115. Stiffener material may adhere to at leastsides of microelectronic device 109.

Reinforcing layer 127 may be a dielectric composition stiffener materialwhich wets exterior surfaces, including exterior surfaces of shafts 115Sof interconnect structures 115. Such a stiffener material may be aviscous material. Along those lines, reinforcing layer 127 may wick-upsides of shafts 115S of interconnect structures 115. For example, astiffener material may be an epoxy or other suitable polymeric material.

Optionally, at 231 an etch back 234 may be used to remove upper residualstiffener material on sides of protrusions 220, including upper ends115E.

At 232, a dielectric layer 117 may be formed surrounding at leastremaining portions of shafts 115S of interconnect structures 115.Optionally, dielectric layer 117 may be formed surrounding at leastremaining portions of shafts 116S of interconnect structures 116. Theremainder of the above-description of formation of dielectric layer 117and other description for any and all operations at 232 is the same asat 210, and thus is not repeated.

At 233, packaged device 100 may be singulated from carrier substrate101. Carrier substrate 101 and adhesive layer 102 may be removed frompackaged device 100 as previously described for operations at 211.

At 233 another package device 130 may be directly coupled to upper ends115E, and/or 116E, and at least portions of shafts 115S, and/or 116S, ofprotrusions 220, as previously described for operations at 211.

Protrusion height 137 may be as previously described. Bonding masses 131may be as previously described, so as to not add any additional heightor thickness to PoP 139.

Solder balls or other electrically conductive bonding masses 155 may beattached as previously described. Packaged device 130 may be aspreviously described. Packaged device 100 may be as previously describedwith respect to an overall height or thickness 157 from upper ends 115Eand 116E to bottom surface 122 of redistribution layer 107, namelyexcluding bonding masses 155.

With reference to FIG. 5, a flow diagram illustrative depicts anexemplary “redistribution layer first” process flow (“process flow”) 140for a packaged device 100. Process flow 140 follows from one or more ofthe above-described operations, and thus is a general recapitulationthereof for purposes of clarity and not limitation.

At 141, at least one redistribution layer 107 having an inner region andan outer region outside the inner region is formed. Such forming of atleast one redistribution layer 107 may include forming firstinterconnect pads 103 in both the inner region and the outer region at alower surface and second interconnect pads 108 in the outer region at anupper surface of at least one redistribution layer 107. Formation at 141may include at least some of operations 151 through 154.

At 151, a carrier substrate having an upper surface and a lower surfaceopposite the upper surface is obtained. At 152, an adhesive layer 102 isoptionally adhered to the upper surface of carrier substrate 101. At153, a metal layer 103 is applied to either an upper surface of adhesivelayer 102 or the upper surface of carrier substrate 101. At 154, firstinterconnect pads 103 are patterned out of metal layer 103. Patterningat 154 may include forming an area array layout for a subset of firstinterconnect pads 103 in the inner region.

After 141, at 142 interconnect structures 115 are formed directly orindirectly on and extend away from corresponding upper surfaces of thesecond interconnect pads in the outer region. At 143, a microelectronicdevice 109 is coupled to an upper surface of at least one redistributionlayer 107 in the inner region.

Optionally at 144, a stiffening layer 127 may be formed with a stiffenermaterial. Optionally, at 145, residual portions of the stiffenermaterial at upper ends of interconnect structures 115 are etched back.

At 146, a dielectric layer 117 is formed surrounding at least portionsof shafts of interconnect structures 115. At 147, optionally residualportions of dielectric layer 117 at the upper ends of interconnectstructures 115 are etched back.

At this juncture, interconnect structures 115 have upper ends protrudingabove an upper surface of dielectric layer 117 a distance to increase awarpage limit. Increased warpage limit is for a combination of at leastpackaged device 100 and one other packaged device 130 directly coupledto protrusions 220 of interconnect structures 115.

At 148, a packaged device 100 may be singulated from carrier substrate101. At 149, carrier substrate 101 and adhesive layer 102 can be removedfrom packaged device 100. For forming a PoP 139, optionally at 150another packaged device 130 is coupled to the upper ends of interconnectstructures 115 with electrically conductive bonding masses 131 toprovide a PoP 139.

“RDL Last” or “RDL-Less” Examples with “Straight” and/or “Bent”Interconnect Structures

With reference to FIG. 6-1, at 241 a carrier substrate 101 having anupper surface 171 and a lower surface opposite thereof has formed on anupper surface 171 thereof a metal layer 179. As many features of thefollowing description have been previously described, though indifferent sequences, multiple operations are combined at 241 forpurposes of clarity and not limitation.

Optionally, metal layer 179 may be patterned to form interconnect pads108 in outer region 129 and a heat spreader 176 in inner region 104. Forpurposes of clarity and not limitation, it shall be assumed thatinterconnect pads 108 and heat spreader 176 are not formed of metallayer 179.

A same metal layer 179, or optionally another metal layer 177, may beformed. For purposes of clarity by way of example and not limitation, itshall be assumed that another metal layer 177 is formed on an uppersurface 172 of metal layer 179. In this example, metal layer 179 is asacrificial metal layer.

Metal layer 177 may be patterned on metal layer 179 to form interconnectpads 108 in outer region 129. Metal layer 177 may be at leastessentially removed from inner region 104.

An adhesive or die pad layer 162 may be deposited or otherwise adheredto an upper surface 172 of metal layer 179 in inner region 104. An uppersurface 173 of adhesive layer 162 may be above or taller than an uppersurface 174 of interconnect pads 108. In an example, adhesive layer 162is an adhesive tape.

At 241 “straight” interconnect structures 115 and/or “bent” interconnectstructures 115, as indicated in a dashed line, may be formed in an outerregion 129 for a packaged device 100. Interconnect structures 115 mayfor example be plated posts or wire bond wires with same or differentpitches, as previously described. For purposes of clarity and notlimitation, it shall be assumed that “straight” interconnect structures115 are formed at 241.

Still at 241, a microelectronic device 109 may be coupled in a face-uporientation to upper surface 173 of adhesive layer 162 in an innerregion 104 of packaged device 100 inside outer region 129. In anotherexample, microelectronic device 109 may be coupled in a face-downorientation.

In this example, microelectronic device 109 is pre-bumped with bumps175. In another example, microelectronic device 109 may not bepre-bumped with bumps 175. However, in this example, a front-sidesurface of microelectronic device 109 has bumps 175 residing thereon.

Continuing at 241, a dielectric layer 117 may be formed surrounding atleast portions of shafts 115S of interconnect structures 115 and alongsides of microelectronic device 109. Optionally, prior to formation ofdielectric layer 117, a reinforcing layer 127 may be formed aspreviously described including wicking along sides of microelectronicdevice 109.

At 241, a polishing or grinding operation 163 may be used to remove aportion of dielectric layer 117 down to upper surfaces 164 of bumps 175and upper ends 115E of interconnect structures 115, namely upper surface165 of dielectric layer 117. Optionally, an etch back operation may beused for such removal of a portion of dielectric layer 117. Optionally,a mold assist film may be used to form dielectric layer 117 below bumps175 and upper ends 115E.

With reference to FIG. 6-2, at 242, at least one redistribution layer107 may be formed over upper ends 115E of interconnect structures 115and over bumps of microelectronic device 109. At a lower surface of suchat least one redistribution layer 107, traces 166 and/or vias 119V maybe formed for interconnection of one or more bumps 175 to one or moreinterconnect structures 115. Formation of at least one redistributionlayer 107 may include formation of upper interconnect pads 103 in bothinner region 104 and outer region 129 along an upper surface of such atleast one redistribution layer 107.

With reference to FIG. 6-3A, at 243A carrier 101 and metal layer 179 maybe removed, and packaged device 100 may be inverted. Lower ends or bases115B of interconnect structures 115 opposite upper ends 115E mayprotrude above an upper surface of dielectric layer 117, after inversionfrom the view illustratively depicted in FIG. 6-2. A distance or height137 of such protrusions 220 may be to increase a warpage limit for acombination of at least packaged device 100 and one other packageddevice 130 directly coupled to such protrusions 220 of interconnectstructures 115. Thus, bases 115B after inversion may have interconnectpads 108 located thereon and thereabove with ends 108E of interconnectpads 108 opposite and over bases 115B.

At 243A adhesive layer 162 may be removed. Further, at 243A an upperportion of dielectric layer 117 may be etched back to lower uppersurface 126 of dielectric layer 117. In this example, upper surface 126is lowered down to an upper surface of microelectronic device 109 (asillustratively depicted) to provide a protrusion height 137. In thisexample, protrusion height 137 of protrusions 220 may be from uppersurface 126 to bases 115B.

With reference to FIG. 6-3B, 243B is an optional example whereinterconnect pads 108 are not formed, such as for no metal layer 177 andmetal layer 179 as a sacrificial layer. The remainder of operations at243B are the same as at 243A, except in this example, upper surface 126is lowered down to just above an upper surface (i.e., a lower surfaceprior to inversion) of microelectronic device 109 to provide aprotrusion height 137. Again, protrusion height 137 of protrusions 220may be from upper surface 126 to bases 115B.

With reference to operations at 244A and 244B respectivelyillustratively depicted in FIGS. 6-4A and 6-4B, a packaged device 130may be coupled to protrusions 220 of interconnect structures 115 withelectrically conductive bonding masses 131 to provide respective PoPs139. Same description is not repeated with respect to formation of PoPs139 for purposes of clarity and not limitation.

With reference to FIG. 7-1, packaged device 100 at 241 of FIG. 6-1 maybe formed without interconnect pads 108 and without a redistributionlayer 107 at 301. Moreover, in this example microelectronic device 109is not pre-bumped, but may be pre-bumped in another implementation.Along those lines, lower ends 115E, previously upper ends, may begenerally at a same level with a front-side surface of microelectronicdevice 109. Ends 115E and microelectronic device 109 may optionally bebumped for subsequent interconnection, such as a surface mountinterconnection.

At 301 adhesive layer 162 may be removed. The remainder of operations at301 are the same as at 243B, except in this example, upper surface 126is lowered down to an upper surface (i.e., a lower surface prior toinversion) of microelectronic device 109 to provide a protrusion height137. Again, protrusion height 137 of protrusions 220 may be from uppersurface 126 to bases 115B.

With reference to operation at 302 illustratively depicted in FIG. 7-2,a packaged device 130 may be coupled to protrusions 220 of interconnectstructures 115 with electrically conductive bonding masses 131 toprovide a PoP 139. Same description is not repeated with respect toformation of PoP 139 for purposes of clarity and not limitation.

With reference to FIG. 8, a flow diagram illustratively depicts anexemplary “redistribution layer last” and “redistribution layer-less”process flow (“process flow”) 340 for a packaged device 100. Processflow 340 follows from one or more of the above-described operations, andthus is a general recapitulation thereof for purposes of clarity and notlimitation.

At 341 interconnect structures 115 are formed directly or indirectly onand extend away from corresponding upper surfaces of interconnect pads108 in outer region 129. Formation at 341 may include at least some ofoperations 351 through 354.

At 351, a carrier substrate 101 having an upper surface and a lowersurface opposite the upper surface is obtained. At 352, a metal layer179 is optionally applied to an upper surface of carrier substrate 101.

At 353, an adhesive layer 102 is adhered to either the upper surface ofcarrier substrate 101 or metal layer 179. At 354, interconnect pads 108are optionally patterned out of metal layer 177 and/or 179. Patterningat 354 may include forming an area array layout for a subset of firstinterconnect pads 103 in the inner region.

At 342, a microelectronic device 109 is coupled to an upper surface ofadhesive layer 162 in inner region 104.

Optionally at 343, a stiffening layer 127 may be formed with a stiffenermaterial. Optionally, at 344, residual portions of the stiffenermaterial at upper or first ends of interconnect structures 115 areetched back.

At 345, a dielectric layer 117 is formed surrounding at least portionsof shafts of interconnect structures 115. At 346, optionally residualportions of dielectric layer 117 at the upper ends of interconnectstructures 115 are etched back.

At 347, at least one redistribution layer 107 in inner region 104 andouter region 129 outside the inner region is optionally formed on anupper surface of dielectric layer 117. At least one redistribution layer107 may be formed to include interconnection with upper ends ofinterconnect structures 115. Such forming of at least one redistributionlayer 107 may include forming interconnect pads 103, traces 166, and/orvias 119V in inner region 104 and/or outer region 129 of at least oneredistribution layer 107.

At 348, carrier substrate 101, optional metal layer 179 and adhesivelayer 162 can be removed from packaged device 100.

At 349, such in-process substrate assembly for packaged device 100 maybe etched back to remove a lower portion of dielectric layer 117 toexpose protrusions 220 of interconnect structures 115. Operations at 349may include inversion of such packaged device 100 for removal of whatwas a lower portion of dielectric layer 117.

At this juncture, interconnect structures 115 have what were lower ends,now upper ends, protruding above what is now an upper surface ofdielectric layer 117 a distance to increase a warpage limit. Increasedwarpage limit is for a combination of at least packaged device 100 andone other packaged device 130 directly coupled to protrusions 220 ofinterconnect structures 115.

At 350, a packaged device 100 may be singulated from a wafer or panel ofsuch packaged devices 100. For forming a PoP 139, optionally anotherpackaged device 130 is coupled to what were lower ends 115E, now upperends 115E, of interconnect structures 115 with electrically conductivebonding masses 131 to provide a PoP 139, such as previously describedand not repeated for purposes of clarity.

While the foregoing describes exemplary embodiment(s) in accordance withone or more aspects of the disclosure, other and further embodiment(s)in accordance with the one or more aspects of the disclosure may bedevised without departing from the scope thereof, which is determined bythe claim(s) that follow and equivalents thereof. Each claim of thisdocument constitutes a separate embodiment, and embodiments that combinedifferent claims and/or different embodiments are within the scope ofthe disclosure and will be apparent to those of ordinary skill in theart after reviewing this disclosure. Claim(s) listing steps do not implyany order of the steps. Trademarks are the property of their respectiveowners.

What is claimed is:
 1. A method for forming a packaged microelectronicdevice, comprising: forming interconnect structures in an outer regionof the packaged microelectronic device; providing a microelectronicdevice in an inner region of the packaged microelectronic device insidethe outer region; forming a dielectric layer surrounding at leastportions of shafts of the interconnect structures and along sides of themicroelectronic device; and the interconnect structures having firstends thereof protruding above an upper surface of the dielectric layer adistance and second ends coupled to a redistribution layer.
 2. Themethod according to claim 1, further comprising: forming theredistribution layer over the second ends of the interconnect structuresand over the microelectronic device, the second ends of the interconnectstructures being opposite the first ends of the interconnect structures,the at least one redistribution layer including first interconnect padsin both the inner region and the outer region along a surface of the atleast one redistribution layer.
 3. The method according to claim 2,further comprising: obtaining a carrier substrate having an uppersurface and a lower surface opposite the upper surface; forming theredistribution layer on the upper surface of the carrier substrate;coupling the redistribution layer to the micro electronic device; andremoving the carrier substrate.
 4. The method according to claim 1,wherein the interconnect structures include plating-formed posts.
 5. Themethod according to claim 1, wherein the interconnect structures includewire bond wires.
 6. The method according to claim 1, further comprisingforming interconnect pads located on the first ends of the interconnectstructures.
 7. The method according to claim 1, wherein the packagedmicroelectronic device is a first packaged microelectronic device, themethod further comprising coupling a second packaged microelectronicdevice to the protrusions of the interconnect structures withelectrically conductive bonding masses to provide a package-on-packagedevice.
 8. The method according to claim 1, wherein the first ends of atleast some of the interconnect structures protruding above the uppersurface of the dielectric layer are laterally displaced with respect tocorresponding second ends of the interconnect structures.
 9. The methodaccording to claim 1, further comprising forming a reinforcing layerwith a stiffener material prior to formation of the dielectric layer.10. A packaged microelectronic device, comprising: interconnectstructures in an outer region of the packaged microelectronic device; amicroelectronic device provided in an inner region of the packagedmicroelectronic device inside the outer region; and a dielectric layersurrounding at least portions of shafts of the interconnect structuresand along sides of the microelectronic device; the interconnectstructures having first ends thereof protruding above an upper surfaceof the dielectric layer a distance and second ends coupled to aredistribution layer.
 11. The packaged microelectronic device accordingto claim 10, further comprising: the redistribution layer coupled tosecond ends of the interconnect structures and over the microelectronicdevice; and the at least one redistribution layer comprising firstinterconnect pads in both the inner region and the outer region along asurface of the at least one redistribution layer.
 12. The packagedmicroelectronic device according to claim 10, wherein the interconnectstructures include plating-formed posts.
 13. The packagedmicroelectronic device according to claim 10, wherein the interconnectstructures include wire bond wires.
 14. The packaged microelectronicdevice according to claim 10, further comprising interconnect padslocated on the first ends of the interconnect structures.
 15. Thepackaged microelectronic device according to claim 10, furthercomprising the other packaged microelectronic device directly coupled tothe protrusions of the interconnect structures with electricallyconductive bonding masses to provide a package-on-package device. 16.The packaged microelectronic device according to claim 10, wherein thefirst ends of at least some of the interconnect structures protrudingabove the upper surface of the dielectric layer are laterally displacedwith respect to corresponding second ends of the interconnectstructures.
 17. The packaged microelectronic device according to claim10, further comprising a reinforcing layer with a stiffener materialbeneath the dielectric layer.
 18. The packaged microelectronic deviceaccording to claim 10, wherein the first ends protrude at least 100microns beyond the dielectric layer.
 19. The packaged microelectronicdevice according to claim 15, wherein the first ends protrude to alength sufficient to accommodate warpage of the first or second packagedmicroelectronic device.